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Injection locking characteristics of indium arsenide quantum dash lasers


Please use this identifier to cite or link to this item: http://hdl.handle.net/1928/3606

Injection locking characteristics of indium arsenide quantum dash lasers

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dc.contributor.author Moscho, Aaron
dc.date.accessioned 2008-02-07T18:13:03Z
dc.date.available 2008-02-07T18:13:03Z
dc.date.issued 2008-02-07T18:13:03Z
dc.date.submitted December 2007
dc.identifier.uri http://hdl.handle.net/1928/3606
dc.description.abstract The study of injection locking characteristics was performed on an InAs Quantum Dash (QDash) semiconductor laser for the first time. The linewidth enhancement factor(α-parameter) of a QDash laser was measured using an injection locking technique that takes advantage of the asymmetry of the injection range. Studies were performed as functions of injecesed photon density, wavelength, and output power. To understand the behavior of the α-parameter versus wavelength, the Hakki-Paoli method, a technique that utilized the below threshold amplified spontaneous emission spectrum, was used to measure the modal gain over 1550 nm to 1573 nm. The α-parameter was found to have changed dramatically with power, indicating a large nonlinear gain coefficient, ε. Using a curve fit of the α versus power curve taken from the injection locking data, ε was measured to be 1.4*10-14 cm3, 1000 times larger than the typical ε of quantum well lasers, changing the dynamics of the laser. The small α-parameter and giant ε dramatically change the dynamics of the laser. To study the effects of the small α-parameter and giant ε further, an operational map was created using an Agilent Technologies High Resolution Spectrometer (HRS) with a resolution of 1 MHz. The new operational map of the InAs QDash laser has features never before seen with other devices, such as the avoidance of coherence collapse with optical feedback. en_US
dc.format.extent 1812442 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en_US
dc.subject Injection Locking en_US
dc.subject Quantum Dash en_US
dc.subject Quantum Dot en_US
dc.subject Semiconductor en_US
dc.subject Nonlinear gain en_US
dc.subject Alpha Parameter en_US
dc.subject Laser en_US
dc.subject Operational map en_US
dc.subject.lcsh Injection lasers.
dc.subject.lcsh Indium arsenide.
dc.subject.lcsh Quantum dots.
dc.title Injection locking characteristics of indium arsenide quantum dash lasers en_US
dc.type Thesis en_US
dc.description.degree Masters of Science in Electrical Engineering en
dc.description.level Masters en
dc.description.department University of New Mexico. Dept. of Electrical and Computer Engineering en
dc.description.advisor Lester, Luke
dc.description.committee-member Ghani, Nasir
dc.description.committee-member Sheik-Bahae, Mansoor

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