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Novel two-color performance of an InAs/InGaAs quantum dots in a well focal plane array

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Please use this identifier to cite or link to this item: http://hdl.handle.net/1928/3230

Novel two-color performance of an InAs/InGaAs quantum dots in a well focal plane array

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Title: Novel two-color performance of an InAs/InGaAs quantum dots in a well focal plane array
Author: Varley, Eric
Advisor(s): Krishna, Sanjay
Committee Member(s): Dawson, Ralph
Lester, Luke
Malloy, Kevin
Department: University of New Mexico. Dept. of Electrical and Computer Engineering
Subject(s): FPA
quantum dot
LC Subject(s): Quantum dots
Degree Level: Masters
Abstract: Novel two-color performance of an InAs/InGaAs quantum dots in a well (DWELL) infrared focal plane array (FPA) is reviewed. The DWELL structure is a derived hybrid of the quantum dot photodetector that consists of an active region composed of InAs quantum dots embedded in InGaAs quantum wells. The DWELL FPA demonstrated MWIR and LWIR performance thought to be attributable to transitions from bound states in the dot to higher and lower lying states in the quantum well (respectively). The DWELL samples were grown using molecular beam epitaxy and fabricated into 320 x 256 focal plane arrays with Indium bumps using standard lithography at the University of New Mexico. The samples were then hybridized to an Indigo Systems Corporation ISC9705 read out integrated circuit and evaluated with a SE-IR Corporation CamIRaTM test platform. The DWELL FPA demonstrated temporal NEDT values of ~53mK and ~68mK (MWIR and LWIR respectively) at 77K.
Graduation Date: August 2007
URI: http://hdl.handle.net/1928/3230

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