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Compact modeling of neutron damage effects in a bipolar junction transistor

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Please use this identifier to cite or link to this item: http://hdl.handle.net/1928/3284

Compact modeling of neutron damage effects in a bipolar junction transistor

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dc.contributor.author Gutierrez, Teresa
dc.date.accessioned 2007-09-09T06:26:04Z
dc.date.available 2007-09-09T06:26:04Z
dc.date.issued 2007-09-09T06:26:04Z
dc.date.submitted July 2007
dc.identifier.uri http://hdl.handle.net/1928/3284
dc.description.abstract The performance of microelectronics in a radiation environment is an important concern for defense and space applications. Bipolar junction transistors (BJTs), in particular, are susceptible to neutron radiation. Neutron radiation affects BJT performance primarily by creating lattice defects, which can dramatically increase carrier recombination rate. In turn, the increase in recombination rate degrades the current gain. Two approaches were taken in the development of a compact BJT model that include the effects of static neutron damage. One approach is based on the Gummel-Poon term for recombination current. The other approach is based on the Shockley-Read-Hall theory of recombination. Simulation results of the BJT neutron-effects model compare favorably with measured data of BJT test structures. Application of the neutron-effects BJT model in a voltage reference circuit provides critical information for circuit design in a neutron environment. en_US
dc.description.sponsorship Sandia National Laboratories en
dc.format.extent 1281310 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en_US
dc.subject displacement damage en_US
dc.subject neutron radiation effects en_US
dc.subject bipolar junction transistor en_US
dc.subject compact modeling en_US
dc.subject Gummel-Poon BJT model en_US
dc.subject SPICE simulation en_US
dc.subject.lcsh Microelectronics
dc.title Compact modeling of neutron damage effects in a bipolar junction transistor en_US
dc.type Thesis en_US
dc.description.degree Master of Science, Electrical Engineering en
dc.description.level Masters en
dc.description.department University of New Mexico. Dept. of Electrical and Computer Engineering en
dc.description.advisor Hawkins, Charles
dc.description.committee-member Hawkins, Charles
dc.description.committee-member Hembree, Charles
dc.description.committee-member Gilmore, Mark


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