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dc.contributor.authorGutierrez, Teresa
dc.date.accessioned2007-09-09T06:26:04Z
dc.date.available2007-09-09T06:26:04Z
dc.date.issued2007-09-09T06:26:04Z
dc.date.submittedJuly 2007
dc.identifier.urihttp://hdl.handle.net/1928/3284
dc.description.abstractThe performance of microelectronics in a radiation environment is an important concern for defense and space applications. Bipolar junction transistors (BJTs), in particular, are susceptible to neutron radiation. Neutron radiation affects BJT performance primarily by creating lattice defects, which can dramatically increase carrier recombination rate. In turn, the increase in recombination rate degrades the current gain. Two approaches were taken in the development of a compact BJT model that include the effects of static neutron damage. One approach is based on the Gummel-Poon term for recombination current. The other approach is based on the Shockley-Read-Hall theory of recombination. Simulation results of the BJT neutron-effects model compare favorably with measured data of BJT test structures. Application of the neutron-effects BJT model in a voltage reference circuit provides critical information for circuit design in a neutron environment.en_US
dc.description.sponsorshipSandia National Laboratoriesen
dc.format.extent1281310 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.subjectdisplacement damageen_US
dc.subjectneutron radiation effectsen_US
dc.subjectbipolar junction transistoren_US
dc.subjectcompact modelingen_US
dc.subjectGummel-Poon BJT modelen_US
dc.subjectSPICE simulationen_US
dc.subject.lcshMicroelectronics
dc.titleCompact modeling of neutron damage effects in a bipolar junction transistoren_US
dc.typeThesisen_US
dc.description.degreeMaster of Science, Electrical Engineeringen
dc.description.levelMastersen
dc.description.departmentUniversity of New Mexico. Dept. of Electrical and Computer Engineeringen
dc.description.advisorHawkins, Charles
dc.description.committee-memberHawkins, Charles
dc.description.committee-memberHembree, Charles
dc.description.committee-memberGilmore, Mark


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