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Compact modeling of neutron damage effects in a bipolar junction transistor

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Please use this identifier to cite or link to this item: http://hdl.handle.net/1928/3284

Compact modeling of neutron damage effects in a bipolar junction transistor

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Title: Compact modeling of neutron damage effects in a bipolar junction transistor
Author: Gutierrez, Teresa
Advisor(s): Hawkins, Charles
Committee Member(s): Hawkins, Charles
Hembree, Charles
Gilmore, Mark
Department: University of New Mexico. Dept. of Electrical and Computer Engineering
Subject: displacement damage
neutron radiation effects
bipolar junction transistor
compact modeling
Gummel-Poon BJT model
SPICE simulation
LC Subject(s): Microelectronics
Degree Level: Masters
Abstract: The performance of microelectronics in a radiation environment is an important concern for defense and space applications. Bipolar junction transistors (BJTs), in particular, are susceptible to neutron radiation. Neutron radiation affects BJT performance primarily by creating lattice defects, which can dramatically increase carrier recombination rate. In turn, the increase in recombination rate degrades the current gain. Two approaches were taken in the development of a compact BJT model that include the effects of static neutron damage. One approach is based on the Gummel-Poon term for recombination current. The other approach is based on the Shockley-Read-Hall theory of recombination. Simulation results of the BJT neutron-effects model compare favorably with measured data of BJT test structures. Application of the neutron-effects BJT model in a voltage reference circuit provides critical information for circuit design in a neutron environment.
Graduation Date: July 2007
URI: http://hdl.handle.net/1928/3284


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